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| HUR60100, HUR60120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-247AC A C(TAB) C A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 VRRM V 1000 1200 A C Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 HUR60100 HUR60120 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=90oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=14.5A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive o Maximum Ratings 70 60 500 23 1.5 -55...+175 175 -55...+150 230 0.8...1.2 6 Unit A A mJ A o C W Nm g HUR60100, HUR60120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=60A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 650 2.5 1.74 2.66 0.65 0.25 Unit uA mA V K/W ns IR VF RthJC RthCH trr IRM IF=1A; -di/dt=300A/us; VR=30V; TVJ=25oC VR=100V; IF=130A; -diF/dt=100A/us; TVJ=100 C o 40 7 14.3 A FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR60100, HUR60120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 100 A 80 IF 60 TVJ=150C TVJ=100C TVJ= 25C 10 C Qr 8 TVJ= 100C VR = 600V 100 A 80 IRM TVJ= 100C VR = 600V 6 IF= 120A IF= 60A IF= 30A 60 40 4 40 IF= 120A IF= 60A IF= 30A 20 2 20 0 0 1 2 VF V 3 0 100 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 280 ns TVJ= 100C VR = 600V Fig. 3 Peak reverse current IRM versus -diF/dt 120 V TVJ= 100C IF = 60A 2.0 1.2 us tfr VFR 1.5 Kf 1.0 IRM trr 240 IF= 120A IF= 60A IF= 30A VFR 80 tfr 0.8 200 0.5 Qr 40 0.4 0.0 0 40 80 120 C 160 TVJ 160 0 200 400 600 -diF/dt 800 A/us 1000 0 0 200 400 0.0 600 A/us 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W ZthJC Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.324 0.125 0.201 ti (s) 0.0052 0.0003 0.038 0.1 0.01 0.0001 0.001 0.01 0.1 1 t s 10 Fig. 7 Transient thermal resistance junction to case |
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